Comparison of Single-Gate SOI & Multi-Gate SOI MOSFETs

This article presents the comparison of SingleGate SOI and Multi-Gate SOI MOSFETs. In the first part we have presented two main fundamental problems of the “ultimate” (sub-10-nm) MOSFET scaling of Single-Gate geometry: the exponential growth of power consumption and sensitivity to fabrication uncertainties. These factors have played the decisive role in for eventual transfer of the CMOS industry to Multi-gate SOI devices. In the second part, a thorough study of the corner effects in MuGFET’s are carried out, and the influence of different parameters are analyzed. Finally, in the last section, we have established the guideline for minimum gate length to avoid short channel effects and excess sub-threshold swing degradation for different gate structures and different gate lengths. Keywords—Nano-mosfets, MuGFET’s, NEGF